Based on the pulse generation scheme of high extinction ratio LiNbO 3 modulator and the pulse modulation scheme with equal pulse width range, the scheme consists of narrow linewidth laser (or single frequency laser g-ld, etc.), lithium niobate intensity modulator (high extinction ratio), modulator pulse driver, pulse application bias controller (locked Mn) performance photoelectric acquisition device, etc.

Based on high extinction ratio LiNbO3 modulator pulse generation, pulse shaping, pulse selection and other pulse modulation schemes
Pulse generation range: 100ps-100ns
1.1550 nm narrow linewidth laser
Main features: narrow line width, continuous wave output, power up to + 16dbm
Others: single frequency DFB laser mode is optional
2. High extinction ratio LiNbO3 intensity modulator
Main parameters: 1550nm band, insertion loss less than 5dB (typical 4dB), half wave voltage V π @ 50KHz < 6V (typical 5.5V), extinction ratio > 0 40dB@1550nm , polarization maintaining input / output. FC / APC connector (extinction ratio per ＞ 35dB is optional. The greater extinction ratio of pulse application is, the better. It is recommended to adopt 40dB extinction ratio to achieve and realize better pulse modulation effect)
Main features: designed for pulse modulation applications
3. RF drive of low jitter modulator
Main parameters: suitable for driving intensity modulator, pulse modulation application, pulse generation range: 100ps ~ 100ns, rise time: ~ 40PS
Main features: ultra low jitter, designed for pulse type amplification.
4. Modulator bias controller:
Main parameters: suitable for pulse application, manual / electronic control two control modes, integrated tap coupler, easy to use.
Main features: ultra low jitter, designed for pulse modulation applications, automatic control mode, Min operating point
5.10 GHz photodetector:
Main features: high performance, suitable for optical pulse signal detection and reception.